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| -3== -0-z =z -- 32 -z= .-me--= = * an AMP company RF MOSFET Power 100 - 500 MHz Features l l l l l Transistor, 4OW, 28V UF2840G v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices for Broadband High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25C Parameter Drain-Source Gate-Source Voltage Voltage Symbol V OS V GS `OS P, 1 T, ( Rating 65 20 4' 116 200 -55 to +150 1.52 I Units V V A w "C "C "C/w 1 F I 6.22 I 6.48 1 a245 I .2X5 I Drain-Source&rent Power Dissipation 1 JunctionTemperature I Storage Temperature Thermal Resistance TST0 8JC 1 K I l.18 I 203 I .070 I x180 I Electrical Characteristics at 25C * Per Side Specificatms Subject to Change Without Notice. M/A-COM, Inc. RF MOSFET Power Transistor, 4OW, 28V U F2840G v2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY V,,=28 V I,,=500 mA P,,,=40 W EFFICIENCY V,,=28 vs FREQUENCY mA P,,,~40 W V I,,=500 25 " 3 6 . $ 0 ii :: 65 . 60 55 - 100 200 300 400 500 100 200 300 400 500 FREQUENCY (MHz) FREQUENCY (%) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=500 mA 0.25 0.5 1 2 2.5 POWER INPUT (W) Specifications Subject to Change Without Notice. M/A-COM, Inc. RF MOSFET Power Transistor, 4OW, 28V U F2840G v2.00 Typical Device Impedance Frequency (MHz) 100 Z,, (OHMS) 6.0 - j 20.0 3.5 -j 11.5 2.5 - j 5.5 1 ( 3.0 + j 0.0 4.0 + j 3.0 V, I,,=500 mA, P,,,=40.0 Watts 1 1 Z LOAD (OHMS) 25.0 + j 27.0 16.5 + j 19.5 13.0 + j 13.0 12.O+j9.0 12.O+j5.0 I 1, 200 300 I 400 500 I V,,=28 Z,, is the series equivalent input impedance of the device from gate to gate. as measured from drain to ground. Z LOAD the optimum series equivalent is load impedance RF Test Fixture VGS VDS - 28 VOLTS IDQ = 500r'A Ll +VDD 33 0 I cgIL - Cl0 - Rf+$yFg I - QlB PARTS LIST Cl,C3 CZ C4,C5,C6, c7 C8 c9, CL? Cl0 Cl1 Cl3 Cl4 Ll LZ,L3 L4 Rl,RZ R3 Tl T2 T3 Ql BOARD CAPACITOR 1SpF CAPACITOR 7pF CHIP CAPACITOR 62.0pF ATC CHIP CAPACITOR 9.lpF ATC CAPACITOR 1000pF TRIWER CAPACITOR t-500pF CAPACITOR ATC 5BopF MONOLITHIC CERAMIC CAPACITOR 0.luF ELECTROLYTIC CAPACITOR 50uF 50 V. 4 TURNS OF NO. 22 AWG ON '0.35" 6 TURNS OF NO. 22 AWG ON '0.35" 8 TURNS OF NO. 22 AWG ON R3 RESISTOR 12K OHMS 0.25 WATT RESISTOR 33 OHMS 3 WA-ITS 50 OHM SEMI-RIGID COAX 2.1" X '0.085" 25 OHM SEMI-RIGID COAX 2X 2.3" X '0.070" 25 OHM SEMI-RIGID COAX 3.3" X '0.070" UF2840G FR4 0.062" Specifications Subjectto Change WithoutNotice. MIA-COM, Inc. |
Price & Availability of UF2840G
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